新型全集成CMOS射频接收器低噪声电源系统  

Novel fully integrated CMOS power system of RF receiver

作　　者：欧阳翔[1] 毛毳[1] 陈东坡[1] 

机构地区：[1]上海交通大学微电子学院,上海200240

出　　处：《电子测量技术》2009年第1期21-23,35,共4页Electronic Measurement Technology

摘　　要：针对CMOS射频接收器芯片,提出了一种新型全集成电源系统方案,相对于传统低压差线性稳压器(LDO)电源,噪声性能显著提高。在对片内模块电源域合理划分的基础上,设计了低噪声的新型电压源取代传统的带隙基准源(Bandgap)作为LDO提供参考电压,并通过对参考电压值巧妙设计,避免了使用LDO电阻反馈网络来调节输出电压,进一步减小了电阻引入的噪声。结合数字校准电路,本系统可以为片内各电路提供准确的电源电压。该设计在Smic0.18μm工艺下后真结果表明,在100 kHz处,新型参考电压源输出噪声为16.38 nV/Hz,片内电源输出噪声仅为21.28 nV/Hz。Based on CMOS RF receiver chip, a novel fully integrated power supply system was proposed, with much better noise performance compared to the traditional LDO power supply. In addition to the reasonable partition of the power domain, a low noise voltage reference, rather than traditional bandgap, was designed to server as the reference voltage of LDO. The smart design of the value of reference voltage avoids the use of resistance feedback network of LDO, and further reduces the noise introduced by resistor. Combined with digital calibration, the system can provide accurate voltage for the circuits on chip. Based on smic0. 18μm process, the simulation result demonstrates that at 100 KHz, the output noise of novel reference voltage is 16. 38nV/√Hz,and the noise of power supply is only 21.28 nV/√Hz

关 键 词：电源系统 低噪声 射频接收器 低噪声电压源 

分 类 号：TN401[电子电信—微电子学与固体电子学]