Surface Properties of AZ31B Magnesium Alloy by Oxygen Plasma Immersion Ion Implantation  

作　　者：韦春贝 巩春志 田修波 杨士勤 傅劲裕 朱剑豪 

机构地区：[1]State Key Laboratory of Advanced Welding Production & Technology,School of Materials Science & Engineering,Harbin Institute of Technology [2]Department of Physics & Materials Science,City University of Hong Kong Tat Chee Avenue [3]Department of Physics & Materials Science,City University of Hong Kong,Tat Chee Avenue

出　　处：《Plasma Science and Technology》2009年第1期33-37,共5页等离子体科学和技术（英文版）

基　　金：supported by National Natural Science Foundation of China(Nos.10575025,50373007);the Program for New Century Excellent Talents in University in China;the City University of Hong Kong Strategic Research(No.7002138)

摘　　要：Oxygen plasma immersion ion implantation （PIII） has been conducted on AZ31B magnesium alloy using different bias voltages. The modified layer is mainly composed of MgO and some MgAl2O4. Results form Rutherford backscattering spectrometry （RBS） and X-ray photoelectron spectroscopy （XPS） indicate that the bias voltage has a significant impact on the structure of the films. The oxygen implant fluences and the thickness of the implanted layer increase with higher bias voltages. A high bias voltage such as 60 kV leads to an unexpected increments in the oxygen-rich layer＇s thickness compared to those of the samples implanted at 20 kV and 40 kV. The hardness is hardly enhanced by oxygen PIII. The corrosion resistance of magnesium alloy may be improved by a proper implantation voltage.Oxygen plasma immersion ion implantation （PIII） has been conducted on AZ31B magnesium alloy using different bias voltages. The modified layer is mainly composed of MgO and some MgAl2O4. Results form Rutherford backscattering spectrometry （RBS） and X-ray photoelectron spectroscopy （XPS） indicate that the bias voltage has a significant impact on the structure of the films. The oxygen implant fluences and the thickness of the implanted layer increase with higher bias voltages. A high bias voltage such as 60 kV leads to an unexpected increments in the oxygen-rich layer＇s thickness compared to those of the samples implanted at 20 kV and 40 kV. The hardness is hardly enhanced by oxygen PIII. The corrosion resistance of magnesium alloy may be improved by a proper implantation voltage.

关 键 词：magnesium alloy oxygen plasma implantation structure HARDNESS corrosion resistance 

分 类 号：TL629.1[核科学技术—核技术及应用]