掺锑CdSnO_3体系的固溶与导电机制研究  

Study on the Solid Solution and Conductive Mechanism of Sbdoped CdSnO3 System

作　　者：尚文[1] 刘杏芹[1] 汤笑婷 沈瑜生[1] 

机构地区：[1]中国科学技术大学材料科学与工程系

出　　处：《应用化学》1998年第2期60-63,共4页Chinese Journal of Applied Chemistry

基　　金：国家自然科学基金

摘　　要：按ＣｄＳｂｘＳｎ１－ｘＯ３进行化学量配比，以化学共沉淀法制得系列掺锑ＣｄＳｎＯ３固溶体粉料．ＸＲＤ分析结果表明，掺锑固溶的ｘ值范围为０＜ｘ＜０．３．研究固溶体组成与电导的关系发现：随着锑离子的溶入，材料的电阻先是较大程度地降低，然后再缓慢升高，并在掺锑固溶量的ｘ值为０．０２和０．２５时，分别出现了两个电阻最低点．探讨了体系的固溶性与导电机制．Sbdoped CdSnO3 solid solution powder was prepared by chemical coprecipitation in accordance with the formula CdSbxSn1-xO3. XRD results indicated the 0<x<03. The electric resistance of the samples markedly decreased at first and then increased gradually with the doped Sb content. Samples with x=002 and 025 showed the lowest value of resistance. The mechanisms of solid solubility and conductivity of the system have been discussed.

关 键 词：固溶体 导电机制 气敏材料 偏锡酸镉 气敏半导体 

分 类 号：TN304.9[电子电信—物理电子学]