Monolithic white LED based on Al_xGa_(1-x) N/InyGa_(1-y)N DBR resonant-cavity  

作　　者：陈宇 黄黎蓉 朱珊珊 

机构地区：[1]College of Optoelectronics Science & Engineering, Huazhong University of Science and Technology [2]Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology

出　　处：《Journal of Semiconductors》2009年第1期30-33,共4页半导体学报（英文版）

基　　金：supported by the National Natural Science Foundation of China (No. 60777019)

摘　　要：A monolithic white light-emitting diode （LED） with blue and yellow light active regions has been designed and studied. With the AlxGa1-xN/InyGa1-yN distributed Bragg reflector （DBR） resonant-cavity, the extraction efficiency and power of the yellow light are enhanced so that high quality white light can be obtained.A monolithic white light-emitting diode （LED） with blue and yellow light active regions has been designed and studied. With the AlxGa1-xN/InyGa1-yN distributed Bragg reflector （DBR） resonant-cavity, the extraction efficiency and power of the yellow light are enhanced so that high quality white light can be obtained.

关 键 词：MONOLITHIC white light-emitting diode distributed Bragg reflector RESONANT-CAVITY 

分 类 号：TN312.8[电子电信—物理电子学] TN820.84