Identification of pore size in porous SiO_2 thin film by positron annihilation  

作　　者：张哲 秦秀波 王丹妮 于润升 王巧占 马雁云 王宝义 

机构地区：[1]Key Laboratory of Nuclear Analysis Techniques, Institute of High Energy Physics, CAS [2]Graduate University of Chinese Academy of Sciences [3]China Institute of Atomic Energy

出　　处：《Chinese Physics C》2009年第2期156-160,共5页中国物理C（英文版）

基　　金：Supported by National Natural Science Foundation of China (10575112, 60606011)

摘　　要：Positron annihilation lifetime and Doppler broadening of annihilation line techniques have been used to obtain information about the small pore structure and size of porous SiO2 thin film produced by sputtered Al-Si thin film and etched Al-Si thin film. The film is prepared by an Al/Si 75：25 at.-% （A175Si25） target with the radiofrequency （RF） power of 66 W at room temperature. A 5 wt.-% phosphoric acid solution is used to etch the Al cylinders. All the A1 cylinders dissolved in the solution after 15 h at room temperature, and the sample is subsequently rinsed in pure water. In this way, the porous SiO2 on the Si substrate is produced. From our results, the values of all lifetime components in the spectra of Al-Si thin film are less than 1 ns, but the value of one of the lifetime components in the spectra of porous SiO2 thin film is τ = 7.80 ns. With these values of lifetime, RTE （Rectangular Pore Extension） model has been used to analyze the pore size.Positron annihilation lifetime and Doppler broadening of annihilation line techniques have been used to obtain information about the small pore structure and size of porous SiO2 thin film produced by sputtered Al-Si thin film and etched Al-Si thin film. The film is prepared by an Al/Si 75：25 at.-% （A175Si25） target with the radiofrequency （RF） power of 66 W at room temperature. A 5 wt.-% phosphoric acid solution is used to etch the Al cylinders. All the A1 cylinders dissolved in the solution after 15 h at room temperature, and the sample is subsequently rinsed in pure water. In this way, the porous SiO2 on the Si substrate is produced. From our results, the values of all lifetime components in the spectra of Al-Si thin film are less than 1 ns, but the value of one of the lifetime components in the spectra of porous SiO2 thin film is τ = 7.80 ns. With these values of lifetime, RTE （Rectangular Pore Extension） model has been used to analyze the pore size.

关 键 词：Al-Si thin film porous SiO2 thin film positron annihilation 

分 类 号：O572.322[理学—粒子物理与原子核物理]