4×128元HgCdTe红外焦平面TDI CCD信号处理器件  

4×128 pixel HgCdTe infrared focal plane TDI CCD signal processing device

作　　者：李冬明[1] 李仁豪[1] 

机构地区：[1]重庆光电技术研究所

出　　处：《半导体光电》1998年第2期67-70,共4页Semiconductor Optoelectronics

摘　　要：采用三相埋沟结构，设计并研制成功用于高背景下红外探测器的高灵敏度4×128元TDICCD信号处理器件。器件转移效率99．99％，动态范围60dB，时钟频率10MHz。文章详细阐述该器件的工作原理、结构设计和制作工艺。A high sensitive 4 ×128 pixel TDI CCD signal processing device used for infrared detector under high background condition has been successfully designed and fabricated with three phase buried - channel construction.The transfer efficiency of 99. 99% is achieved, with dynamic range of 60 dB and clock frequency of 10 MHz. The operation principle, design consideration and fabrication technology for the device are described in detail.

关 键 词：TDICCD 灵敏度 红外焦平面技术 电荷耦合器件 

分 类 号：TN215[电子电信—物理电子学] TN386.5