C波段CMOS射频前端电路设计与实现  

Design and Complement of C-Band CMOS RF Front-End

作　　者：丘聪[1] 叶青[1] 

机构地区：[1]中国科学院微电子研究所,北京100029

出　　处：《半导体技术》2009年第2期189-192,共4页Semiconductor Technology

摘　　要：设计了一款工作在C波段(4.2 GHz)的CMOS射频前端电路,电路包括低噪声放大器和Gilbert型有源双平衡混频器。其中低噪声放大器采用共源和共栅放大器方式,实现了单端输入到差分输出的变换;而混频器的输出端采用电感负载形式。电路采用SMIC 0.18μm RF工艺实现,测试结果表明,混频器的输出频率约为700 MHz,电路的功率增益为24 dB,单边带噪声指数为8 dB,在1.8 V工作电压下,电路总功耗为36 mW。A CMOS RF front-end operates at C band （4.2 GHz） was proposed, including a low noise amplifier （LNA） and a Gilbert double-balanced mixer. The LNA used common source and common gate amplifiers to realize single-end input to differential output and the mixer was with inductor loads. The front-end was implemented in SMIC 0.18 μm RF process. The measurement results show that the power gain is 24 dB, noise figure （SSB） is 8 dB, the output frequency is about 700 MHz and the total power consumption is 36 mW with 1.8 V power supply voltage.

关 键 词：超外差接收机 射频前端 低噪声放大器 混频器 

分 类 号：TN47[电子电信—微电子学与固体电子学]