相含量与晶粒半导化对CaCu_3Ti_4O_(12)介电性能的影响  

Influences of crystallinity and crystal semiconducting degree on giant dielectric property of CaCu_3Ti_4O_(12)

作　　者：魏纳新[1] 周小莉[1] 

机构地区：[1]台州学院,浙江临海317000

出　　处：《浙江工业大学学报》2009年第2期131-133,共3页Journal of Zhejiang University of Technology

基　　金：2005年浙江省科技计划重点项目(2005C21119)

摘　　要：在25-355K温区范围内测定了陶瓷样品的介电性能；用XRD测量了其结构；分别考察了介电常数与晶相含量、测试频率间的关系．结果表明：样品的晶相含量对其介电性能的影响不是惟一的，当相对晶相含量较低时，晶相含量与CaCu3Ti4O12相对介电常数成正比；当相对晶相含量较高时，晶粒半导化程度对CaCu3Ti4O12的介电性能有明显的影响，半导化程度越高，其宏观介电常数也越大．CaCu3Ti4O12 ceramics material has been successfully fabricated by the solid state reaction. The dielectric property of the ceramics samples in the temperature range of 25-355 K was measured; The structure of the material has been investigated by X-ray diffractometer （XRD）; and the dependences of the dielectric constant on the crystallinity and frequency are studied respectively. The experimental results show that the crystallinity is not the sole factor determining the dielectric property of the material. When the crystallinity is at a lower level, the crystallinity is proportional to dielectric constant. However, when crystallinity is at a higher level, the semieonducting degree of the crystal grain also plays an important role in the dielectric property of CaCu3Ti4O12. The macro dielectric constant generally increases with the semiconducting degree of the crystal grain.

关 键 词：CACU3TI4O12 晶相含量 巨介电常数 晶粒半导化 

分 类 号：TB34[一般工业技术—材料科学与工程]