调Q激光最佳刻标参数研究  

A Study on the Optmum Marking Parameters of Q Switched Laser

作　　者：李又生[1] 许晓[1] 雷建设[1] 刘斌波[1] 胡兵[1] 

机构地区：[1]华中理工大学激光研究院

出　　处：《光电子．激光》1998年第2期152-154,共3页Journal of Optoelectronics·Laser

摘　　要：研究了调Ｑ激光与金属相互作用的物理过程，用等离子体云飞散的近似模型和瞬时温度场关系式对凹坑的形成机制作了定性分析，用蒸发阵面上的功率平衡方程，讨论了不同要求的刻标加工最佳参数的选取。理论分析与刻标效果基本相符。The interaction of Q Switched laser with metal is studied.According to the approximate model of plasma cloud flying apart and the transient temperature gradient equation,the qualitative analysis of the mechanism of hollow shaping is made.By means of the power balance equation on the evaporating front,the selection of the optmum parameters required by different types of marking is desicussed.The theoretical analysis agrees with the experimental results.

关 键 词：刻标 等离子体 能量密度 调Q激光器 

分 类 号：TN248.34[电子电信—物理电子学]