二氧化锡/多孔硅/硅光伏特性研究  

Study of the Photovoltaic Properties of Tin Oxide/Porous Silicon/Silicon

作　　者：沈华[1] 吴孙桃[1] 朱文章[2] 王延华[1] 

机构地区：[1]厦门大学物理系,361005 [2]集美航海学院基础部,厦门361021

出　　处：《固体电子学研究与进展》1998年第1期43-48,共6页Research & Progress of SSE

基　　金：国家和福建省自然科学基金

摘　　要：测量了二氧化锡（SnO2）／多孔硅（PS）／硅（Si）的光电压谱，分析表明：在SnO2／PS／Si材料中存在着两个异质结；当样品吸附还原性气体时，其光电压明显下降。当样品在1％液化石油气的氛围时（相对于空气），光电压减少了16．4％-27．5％；在1％CO氛围时，减少了8．1％-19．4％；在1％H2氛围时，减少了12．1％-14．9％，因此SnO2／PS／Si可作为一种新的敏感元件。文中还对测量结果进行了讨论分析。The photovoltage spectra of Tin Oxide/Porous Silicon/Silicon(SnO2/PS/Si)have been studied. It is shown that there exist two heterojunctions inSnO2/PS/Si structure. The photovoltage decreases evidently when the sample absorbes reducing gas. The photovoltage decreases by 16. 4-27. 5 percent when theabsorbed gas contains 1 percent liquified petroleum, by 8. 1 19. 4 percent when thesample absorbes gas with 1 percent CO,and by 12. 1-14. 9 percent when the sample absorbes gas with 1 percent H,. The experimental results indicate that SnO2/PS/Si is a good material for gas sensor. The mechamism for the gas absorption ofSnO2/PS/Si is discussed.

关 键 词：光伏效应 气敏特性 多孔硅 

分 类 号：TN204[电子电信—物理电子学]