基于共振隧穿的位移传感器设计  

Design of displacement transducer based on resonant tunneling film

作　　者：张庆伟[1] 温廷敦[1] 

机构地区：[1]中北大学微米纳米技术研究中心,山西太原030051

出　　处：《传感器与微系统》2009年第2期66-67,共2页Transducer and Microsystem Technologies

摘　　要：运用了一种新效应——介观压阻效应,以A lAs/GaAs/A lAs共振隧穿双势垒(DBRT)结构薄膜作为力敏元件,设计了一种压阻式微位移传感器。通过分析、计算和模拟得到了它的输入、输出特性和灵敏度,把它与同类传感器做了比较,结果显示:DBRT结构可以提高灵敏度、调节灵敏度。为设计介观压阻式微位移传感器提供了理论依据。A new effect--meso-piezoresistive effect is used, took GaAs/AlAs/InGaAs double-barrier resonant tunneling（ DBRT）film as stress sensitive component,a piezoresistive micro-displacement transducer is designed. its in-out characteristic and sensitivity are obtained by analysis, calculation and simulation, it is compared with congeneric sensor. The results show that the double-barrier resonant tunneling may promote and adjust sensitivity. It offers a theory basis for devising meso-piezoresistive micro-displacement transducers.

关 键 词：传感器 共振隧穿 介观压阻效应 位移 灵敏度 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置]