一种高精度曲率补偿带隙基准电路  

A Curvature-Compensated CMOS Bandgap Voltage Reference for High Precision Applications

作　　者：李华[1] 吕坚[1] 蒋亚东[1] 

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,成都610054

出　　处：《微电子学》2009年第1期38-41,共4页Microelectronics

基　　金：国家杰出青年基金资助项目(60425101);"教育部新世纪优秀人才计划"资助项目(NCET-04-0896)

摘　　要：设计了一种高精度高阶补偿的带隙基准参考电压电路，通过Buck氏电压转移单元和与温度无关的电流对V雎进行高阶补偿。测试表明，温度在-45℃～125℃时，温度系数为5．9×10^-6V／℃，在3．5～5．5V之间的电压调整率为0．4mV／V。采用低压共源共栅电流镜结构，以减少对电源电压的依赖，消除了精度与余度之间的矛盾。A high precision bandgap reference with higher-order curvature compensation was designed. The higher-order compensation of VBE was implemented by utilizing Buck＇s voltage transfer cell and temperature independent current. Test results showed that the circuit had a temperature coefficient of 5. 9 ×10^-6 V/℃ in the temperature range from -45 ℃ to 125 ℃, and an average line regulation of 0. 4 mV/V for 3.5 V to 5.5 V supply voltage. A low voltage cascode current mirror was also introduced to reduce the dependency on supply voltage, thus eliminating the conflict between precision and margin.

关 键 词：CMOS 带隙基准源 高阶曲率补偿 低压共源共栅电流镜 

分 类 号：TN432[电子电信—微电子学与固体电子学]