热氧化多孔硅制备及其干涉特性研究  

Study on preparation process and interference characteristics of thermal oxidized porous silicon

作　　者：黎学明[1] 李春梅[1] 杨文静[1] 陈建文[1] 

机构地区：[1]重庆大学化学化工学院,重庆400030

出　　处：《功能材料》2009年第2期256-259,共4页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(10476035)

摘　　要：采用电化学阳极氧化法制备彩色薄层多孔硅，经高温热氧化处理后形成稳定的热氧化多孔硅。研究电化学制备条件对热氧化多孔硅的干涉效应和光学厚度的影响，分析热氧化处理前后多孔硅的稳定性。结果表明，在可见光波长范围内，所制备的热氧化多孔硅反射光谱出现一定规律性的干涉条纹，表现出明显的反射干涉现象；随阳极氧化时间、电流密度和HF浓度增大，热氧化多孔硅光学厚度呈增大趋势，当阳极氧化时间为30s、电流密度为520mA／cm^、v（HF）：v（C2H5OH）为2：1～5：2时，制备的热氧化多孔硅干涉条纹均匀且光学厚度较大；热氧化处理后，多孔硅结构中的Si-H。键被Si-O键所取代，其反射干涉特性非常稳定。By electrochemical anodization method and thermal oxidation at high temperature furthurly, a chromatic thin thermal oxidized porous silicon film is obtained. The influence of electrochemical anodization conditions on interference characteristics and optical thickness of thermal oxidized porous silicon is analyzed, and its stability is also evaluated. The results show that： Interference phenomenon in reflectivity spectra of thermal oxidized porous silicon appear in range of visible light wavelength and it exhibits good reflectivity interference characteristics. With increasing electrochemical anodization time, current density and HF concentration, optical thickness of thermal oxidized porous silicon increases gradually. On the condition of anodization time at 30s, current density for 520mA/cm^2 and v（HF）：v（C2H5OH）=2：1-5：2, the optical thickness is large enough and the interference fringes distribute homogeneously. The Si-Hx bind in thermal oxidized porous silicon structure is replaced by Si-O bind after thermal oxidation at high temperature and its interference characteristics is very stable.

关 键 词：多孔硅 反射光谱 热氧化 光学厚度 

分 类 号：O433.4[机械工程—光学工程]