p型深受主能级对OLED器件电荷输运的影响  

Effect of p-type Deep Accepter-like Trap on the Charge Carrier Transportation of OLEDs

作　　者：陈伟[1] 饶海波[1] 蒋泉[1] 余心梅[1] 胡玥[1] 李君飞[1] 侯斌[1] 

机构地区：[1]电子科技大学光电信息学院,四川成都610054

出　　处：《发光学报》2009年第1期51-54,共4页Chinese Journal of Luminescence

基　　金：浙江阳光集团资助项目(W050317)

摘　　要：对OLED器件施加扫描电压时,器件的瞬态电压-电流特性表现出滞后现象。并且随着扫描电压的方向、扫描速度的不同,器件瞬态电压-电流曲线也不相同。使用具有ITO/CuPc/NPD/Alq3/LiF/Al结构的OLED器件做电压扫描测试,并尝试用p型深受主型陷阱能级的存在,以及深能级较长的充放电时间特性对OLED器件中载流子输运过程的影响来定性解释上述滞后现象,获得了比较满意的结果,为器件性能的进一步优化找到了方向。Transient voltage-current characteristics of OLED show hysteresis effects in the bias regime depending on the direction and speed of bias sweep. This behaviour was investigated here for the example of device based on the configuration of ITO/CuPc/NPD/Alq3/LiF/Al. The existence and relatively long recharging time of p-type deep accepter-like trap on the recharging process after the change of bias of OLED should be responsible for these phenomena. According to the above mentioned analysis, some measurements were taken to change the concentration of those deep traps in order to improve the optical and electric performance of OLED.

关 键 词：有机电致发光 电压-电流特性 p型深受主能级 前向扫描 

分 类 号：TN383.1[电子电信—物理电子学] TN873.3