非对称型GCT缓冲层的特性分析  

Analysis of the Characteristics for the Buffer Layer in Asymmetrical Gate Commutated Thyristor

作　　者：郑英兰[1] 李佳[2] 吴春瑜[2] 钟玲[3] 

机构地区：[1]沈阳职业技术学院电气工程系,辽宁沈阳110045 [2]辽宁大学物理学院,辽宁沈阳110036 [3]沈阳炮兵学院雷达教研室,辽宁沈阳110162

出　　处：《辽宁大学学报（自然科学版）》2009年第1期27-29,共3页Journal of Liaoning University：Natural Sciences Edition

摘　　要：通过分析非对称型门极换流晶闸管缓冲层的特性,提出了缓冲层结构的设计方法,根据该设计方法建立了门极换流晶闸管的结构模型,利用MED IC I软件对缓冲层的特性进行了模拟.模拟结果表明,引入缓冲层的GCT结构能够很好地调节阻断特性和通态特性,使GCT的综合特性得以优化.The design of the buffer layer in asymmetrical gate commutated thyristor was advanced by analyzing its characteristics. According to the design, the structural model of the GCT is established, and the characteristics of the buffer layer are simutated by using MEDICI software. The results show that the introduction of a buffer layer structure of the GCT can adjust blocking characteristic and on - state characteristic well, and optimize the integrated characteristic of GCT.

关 键 词：门极换流晶闸管 器件模拟 缓冲层 

分 类 号：TN342[电子电信—物理电子学]