In situ photoemission study of interface and film formation during epitaxial growth of Er_2O_3 film on Si(001) substrate  

作　　者：朱燕艳 方泽波 刘永生 廖灿 陈圣 

机构地区：[1]Department of Mathematics and Physics, Shanghai University of Electric Power, Shanghai 200090, China [2]Surface Physics Laboratory （National Key Laboratory）, Fudan University, Shanghai 200433, China

出　　处：《Journal of Rare Earths》2008年第6期775-777,共3页稀土学报（英文版）

基　　金：supported by the Special Project of Shanghai Nano Technology (0852nm02400 and 0752nm012);Shaoxing Science and Technology Commission (2007A21015);Shanghai Rising-Star Program (07QA14026);the National Natural Science Foundation of China (10804072);the Key Fundamental Project of Shanghai (08JC1410400);Shanghai Education Commission (07zz143)

摘　　要：Synchrotron radiation photoemission spectroscopy was used to study the formation process of Er2O3/Si（001） imerface and film during epitaxial growth on Si. A shift in the O core-level binding energy was found accompanied by a shift in the Er2O3 valence band maximum. This shift depended on the oxide layer thickness and interfacial structure. An interfacial layer was observed at the initial growth of Er2O3 film on Si, which was supposed to be attributed to the effect of Er atom catalytic oxidation effect.Synchrotron radiation photoemission spectroscopy was used to study the formation process of Er2O3/Si（001） imerface and film during epitaxial growth on Si. A shift in the O core-level binding energy was found accompanied by a shift in the Er2O3 valence band maximum. This shift depended on the oxide layer thickness and interfacial structure. An interfacial layer was observed at the initial growth of Er2O3 film on Si, which was supposed to be attributed to the effect of Er atom catalytic oxidation effect.

关 键 词：high-κ oxides surface and interface chemistry rare earths 

分 类 号：TB304[一般工业技术—材料科学与工程]