Ti基体上形成微弧氧化膜组成和结构的研究  

Study on composition and structure of oxide film formed by microarc oxidation on Ti substrate

作　　者：刘福[1,2] 宋英[3] 王福平[3] 孙德智[2] 

机构地区：[1]哈尔滨工业大学材料科学与工程学院,黑龙江哈尔滨150001 [2]哈尔滨工业大学市政环境工程学院,黑龙江哈尔滨150001 [3]哈尔滨工业大学应用化学系,黑龙江哈尔滨150001

出　　处：《燕山大学学报》2009年第1期4-8,共5页Journal of Yanshan University

摘　　要：在甘油磷酸钙和醋酸钙电解液中采用直流电源对纯Ti进行了微弧氧化。采用微弧氧化方法所制备的氧化膜具有粗糙多孔的结构,且微孔直径随着电压的增加而增大。AES分析表明在基体与氧化膜界面发生了扩散,从基体钛到氧化膜的表面氧的浓度逐渐增大,钛的浓度逐渐减小。XPS分析表明氧化膜的组成随着所施加的微弧氧化电压而改变,微弧氧化电压为200V时TiO2、Ti2O3和TiO占Ti的原子百分比分别为72.61%、22.08%和5.31%;当微弧氧化电压为350V时氧化膜表面Ti元素只由TiO2、Ti2O3组成,且占Ti的原子百分比分别为85.48%、14.52%。Microarc oxidation was performed on Ti in electrolytes containing calcium glycerphosphate （Ca-GP） and calcium acetate （CA） using a regulated direct current power supply. The oxide films fabricated by MAO display a porous and rough structure on the surface of oxide film, the sizes ofmicropores tended to increases with increasing voltage of microarc oxidation. The AES study shows that the diffusion processes occur in the interface of the metal substrate and oxide film, the concentration of O increase, and the concentration of Ti decrease from substrate to oxide film. XPS analysis shows the compositions of oxide film change with the applied voltage, the concentration of TiO2, Ti2O3 and TiO were 72.61%, 22.08% and 5.31%, respectively when the applied voltage reach 200 V, Ti element only consists of TiO2, Ti2O3 and its concentration were 85.48%, 14.52%, respectively when applied voltage is up to 350 V.

关 键 词：微弧氧化 氧化膜 钛 XPS 

分 类 号：TG333.17[金属学及工艺—金属压力加工]