电子俘获型薄膜材料的结构与光学性能  

Microstructure and Luminescent Studies of Electron Trapping Thin Film

作　　者：范文慧[1] 王永昌[1] 刘英[2] 过晓晖 张大慰[2] 侯洵[2] 

机构地区：[1]西安交通大学理学院现代物理研究所 [2]中国科学院西安光学精密机械研究所

出　　处：《光学学报》1998年第5期591-595,共5页Acta Optica Sinica

摘　　要：采用电子束沉积技术成功制备了以碱土金属硫化物为基质材料、稀土元素离子作为激活中心的输出红光的红外上转换及光存储薄膜材料ＣａＳＥｕ，Ｓｍ。物相结构测试表明，基片温度和后退火晶化处理对薄膜的晶态有很大影响。在本实验的制备条件下，（２００）面的衍射峰最强；加硫共蒸或通入少量Ｈ２Ｓ有助于改善ＣａＳ薄膜的化学计量比。光谱测试表明，薄膜材料的光学性能与粉末材料基本相同。Infrared upconversion and optical storage thin film CaS∶Eu, Sm with red light output has been successfully developed by electron beam deposition (EBD). The film was prepared by doubly rare earth ions doped alkaline earth sulfides (AES) CaS. Its phases and microstructures were identified by X ray diffraction (XRD). Surface morphology of the films was observed by scanning electron microscope (SEM). The chemical composition of the films was determined by electron probe microanalysis (EPMA). The studies on the optical properties of the film were presented.

关 键 词：电子俘获 光谱 转换 光存储 AES 薄膜 

分 类 号：O484.41[理学—固体物理] O438[理学—物理]