TiAl金属间化合物的淬火缺陷研究  

Study of quenched-in defects in intermetallic compound TiAl by positron annihilation

作　　者：王宝义[1] 张水合[1] 常晶[1] 王天民[1] 

机构地区：[1]兰州大学,中国科学院高能物理研究所

出　　处：《核技术》1998年第4期217-220,共4页Nuclear Techniques

基　　金：国家自然科学基金

摘　　要：采用正电子寿命谱技术研究了ＴｉＡＩ以及ＴｉＡｌ金属间化合物的淬火缺陷及其回复行为。结果表明，充分退火ＴｉＡｌ试样中有一定数量的晶界存在；ＴｉＡｌ合金高温淬火过程中在产生大量空位的同时也产生了一定数量的空位团和空位－杂质原子复合体等二次缺陷，在３００－６００℃的温度范围内，由于这些复合缺陷的分解和迁移，使空位团进一步聚集长大。The recovery behavior of quenched-in defects in TiAl and Ti3Al alloys has been studied by the positron annihilation technique. It is shown that in a fully annealed sample there exists a certain number of grain boundaries in TiA1 alloy, and during quenching from high temperature, quite a lot of secondary defects such as vacancy clusters and vacancy-impurity complexes are produced. Because of the decomposition and transportation of defect complexes, the vacancy clusters aggregate further in the range of 300 to 600℃

关 键 词：TIAL 淬火缺陷 等时退火 正电子寿命 

分 类 号：TG157[金属学及工艺—热处理]