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机构地区:[1]天津大学先进陶瓷与加工技术教育部重点实验室,天津300072 [2]领先大都克(天津)电触头制造有限公司,天津300111
出 处:《华中科技大学学报(自然科学版)》2009年第2期89-91,95,共4页Journal of Huazhong University of Science and Technology(Natural Science Edition)
基 金:高等学校博士学科点专项科研基金资助项目(20050056055)
摘 要:在低阻的Ni/(Ba,Sr)TiO3复合PTC材料的制备过程中,研究了B2O3-PbO-ZnO-SiO2玻璃料加入量对Ni-(Ba,Sr)TiO3相界面的改性以及对电性能的影响.利用透射电镜研究了相界面的细节,将相界面厚度与电荷传输示意图相结合,讨论了复合材料的电性能.结果表明,玻璃料的加入量对Ni-(Ba,Sr)TiO3相界面厚度的控制存在着两个临界点:一个是相界面上隧道效应消失的临界点;另一个是玻璃料包裹着金属Ni处于(Ba,Sr)TiO3陶瓷晶界,加入金属可以有效降低复合材料室温电阻率的临界点.Ni/(Ba,Sr)TiO3 PTC composite with low room-temperature resistivity was fabricated, and the modification of the Ni-(Ba, St)TiO3 interface and the electrical properties of the composite with the variation of B2O3-PbO-ZnO-SiO2 glass amount were investigated. TEM (transmission electron microscopy) analyses were carried out to investigate the interfacial details. Combining the width of the phase interface with the schematic figure of charge transport behavior, the electrical properties were discussed. The results indicate that there exist two critical points of the phase interface width for the glass amount. One is for the disappearance of quantum mechanical tunneling effect at the phase interface. The other is for the effective decrease of room-temperature resistivity due to the nickel addition, as the glass with enveloped nickel particles is located at the ceramic grain boundary.
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