TBP掺杂比例对OLED蓝光器件的影响  

Effect of TBP Doping Scale on Blue OLED

作　　者：牟强[1] 王秀峰[2] 张麦丽[1] 

机构地区：[1]陕西科技大学电气与信息工程学院,陕西西安710021 [2]陕西科技大学材料科学与工程学院,陕西西安710021

出　　处：《液晶与显示》2009年第1期71-75,共5页Chinese Journal of Liquid Crystals and Displays

基　　金：国家自然科学基金资助项目(No.20476054);陕西省教育厅专项研究基金资助项目(No.03JK1610)

摘　　要：制备了以AND为主体的蓝光器件,发现AND厚度对器件发光特性有一定影响。当AND/Alq3厚度比为4∶3且厚度为40nm时,所制器件启亮电压低,发光特性好。另外,掺杂TBP后,改变了器件的能级结构,可有效输入电子而阻挡空穴输出,提高激子在AND中的复合。TBP掺杂比例存在一最佳值,实验发现,当掺杂比例为2%时,器件有最佳发光特性和色纯度。In the experimentation, the blue OLED with 9,10-di-（2-naphthyl） anthracene （ADN）as lightemitting subjectivalization was fabricated. It is found that the performances of devices are effected by the thickness of AND. When the ratio of AND/Alq3 thickness is 4 ： 3, and the thickness of AND is 40 nm,the open voltage of devices is lower and the characteristic of luminescence is improved. In addition,when the TBP is doped in devices,the energy level structure is changed. For this reason the effi- ciency of electronic injection is improved and hole export keeps off state. So the recombination rate of exciton is improved. It is also found that scale of the TBP doping has a best level. When the scale level is 2% ,the characteristic of luminescence and color purity quotient of the devices are best.

关 键 词：蓝光器件 ADN TBP 色纯度 

分 类 号：TN304.5[电子电信—物理电子学]