Fracture mechanics analysis on Smart-Cut~ technology.Part 1:Effects of stiffening wafer and defect interaction  

作　　者：Bin Gu Hongyuan Liu Yiu-Wing Mai Xi Qiao Feng Shou Wen Yu 

机构地区：[1]Centre for Advanced Materials Technology (CAMT),School of Aerospace, Mechanical and MechatronicEngineering (AMME) J07, University of Sydney,Sydney, NSW 2006, Australia [2]Department of Engineering Mechanics,Tsinghua University, 100084 Beijing, China

出　　处：《Acta Mechanica Sinica》2009年第1期73-81,共9页力学学报（英文版）

基　　金：the Australian Research Council (ARC),the National Natural Science Foundation of China (10525210 and 10732050); 973 Project (2004CB619303)

摘　　要：In the present paper, continuum fracture mechanics is used to analyze the Smart-Cut process, a recently established ion cut technology which enables highly efficient fabrication of various silicon-on-insulator （SOI） wafers of high uniformity in thickness. Using integral transform and Cauchy singular integral equation methods, the mode-I and mode-II stress intensity factors, energy release rate, and crack opening displacements are derived in order to examine several important fracture mechanisms involved in the Smart-Cut process. The effects of defect interaction and stiffening wafer on defect growth are investigated. The numerical results indi- cate that a stiffener/handle wafer can effectively prevent the donor wafer from blistering and exfoliation, but it slows down the defect growth by decreasing the magnitudes of SIF＇s. Defect interaction also plays an important role in the splitting process of SOI wafers, but its contribution depends strongly on the size, interval and internal pressure of defects. Finally, an analytical formula is derived to estimate the implantation dose required for splitting a SOI wafer.In the present paper, continuum fracture mechanics is used to analyze the Smart-Cut process, a recently established ion cut technology which enables highly efficient fabrication of various silicon-on-insulator （SOI） wafers of high uniformity in thickness. Using integral transform and Cauchy singular integral equation methods, the mode-I and mode-II stress intensity factors, energy release rate, and crack opening displacements are derived in order to examine several important fracture mechanisms involved in the Smart-Cut process. The effects of defect interaction and stiffening wafer on defect growth are investigated. The numerical results indi- cate that a stiffener/handle wafer can effectively prevent the donor wafer from blistering and exfoliation, but it slows down the defect growth by decreasing the magnitudes of SIF＇s. Defect interaction also plays an important role in the splitting process of SOI wafers, but its contribution depends strongly on the size, interval and internal pressure of defects. Finally, an analytical formula is derived to estimate the implantation dose required for splitting a SOI wafer.

关 键 词：Smart-Cut technology Silicon-on-insulatorwafer Crack growth Fracture mechanics Stress intensityfactor 

分 类 号：O34[理学—固体力学] TB301[理学—力学]