Influence of the sputtering pressure on the properties of transparent conducting zirconium-doped zinc oxide films prepared by RF magnetron sputtering  

作　　者：刘汉法 张化福 类成新 袁长坤 

机构地区：[1]School of Physics and Optic-Electronic Information,Shandong University of Technology

出　　处：《Journal of Semiconductors》2009年第2期17-20,共4页半导体学报（英文版）

摘　　要：Transparent conducting zirconium-doped zinc oxide films with high transparency and relatively low resistivity have been successfully prepared on water-cooled glass substrate by radio frequency magnetron sputtering at room temperature. The Ar sputtering pressure was varied from 0.5 to 3 Pa. The crystallinity increases and the electrical resistivity decreases when the sputtering pressure increases from 0.5 to 2.5 Pa. The cystallinity decreases and the electrical resistivity increases when the sputtering pressure increases from 2.5 to 3 Pa. When the sputtering pressure is 2.5 Pa, it is obtained that the lowest resistivity is 2.03 x 10^-3Ω .cm with a very high transmittance of above 94%. The deposited films are polycrystalline with a hexagonal structure and a preferred orientation perpendicular to the substrate.Transparent conducting zirconium-doped zinc oxide films with high transparency and relatively low resistivity have been successfully prepared on water-cooled glass substrate by radio frequency magnetron sputtering at room temperature. The Ar sputtering pressure was varied from 0.5 to 3 Pa. The crystallinity increases and the electrical resistivity decreases when the sputtering pressure increases from 0.5 to 2.5 Pa. The cystallinity decreases and the electrical resistivity increases when the sputtering pressure increases from 2.5 to 3 Pa. When the sputtering pressure is 2.5 Pa, it is obtained that the lowest resistivity is 2.03 x 10^-3Ω .cm with a very high transmittance of above 94%. The deposited films are polycrystalline with a hexagonal structure and a preferred orientation perpendicular to the substrate.

关 键 词：zirconium-doped zinc oxide films transparent conducting films magnetron sputtering sputtering pressure 

分 类 号：TN304.21[电子电信—物理电子学]