A surface potential-based non-charge-sheet core model for undoped surrounding-gate MOSFETs  

作　　者：何进 张健 张立宁 马晨月 陈文新 

机构地区：[1]The Key Laboratory of Integrated Microsystems,Peking University Shenzhen Graduate School [2]TSRC and ULTRAS Team,EECS,Peking University [3]Department of Electronics and Computer Engineering,Hong Kong University of Science & Technology

出　　处：《Journal of Semiconductors》2009年第2期30-33,共4页半导体学报（英文版）

基　　金：supported by the National Natural Science Foundation of China (No. 60876027);a Competitive Earmarked Grant from theResearch Grant Council of Hong Kong SAR (No. HKUST6289/04E);the International Joint Research Program from Japan (No.NEDOO5/06.EG01).

摘　　要：A surface potential based non-charge-sheet core model for cylindrical undoped surrounding-gate （SRG） MOSFETs is presented. It is based on the exact surface potential solution of Poisson＇s equation and Pao-Sah＇s dual integral without the charge-sheet approximation, allowing the SRG-MOSFET characteristics to be adequately described by a single set of the analytic drain current equation in terms of the surface potential evaluated at the source and drain ends. It is valid for all operation regions and traces the transition from the linear to saturation and from the sub-threshold to strong inversion region without fitting-parameters, and verified by the 3-D numerical simulation.A surface potential based non-charge-sheet core model for cylindrical undoped surrounding-gate （SRG） MOSFETs is presented. It is based on the exact surface potential solution of Poisson＇s equation and Pao-Sah＇s dual integral without the charge-sheet approximation, allowing the SRG-MOSFET characteristics to be adequately described by a single set of the analytic drain current equation in terms of the surface potential evaluated at the source and drain ends. It is valid for all operation regions and traces the transition from the linear to saturation and from the sub-threshold to strong inversion region without fitting-parameters, and verified by the 3-D numerical simulation.

关 键 词：non-classical MOS transistor surrounding-gate MOSFETs device physics surface potential model non-charge-sheet approximation 

分 类 号：TN386[电子电信—物理电子学]