电阻抗成像交叉测量模式的抗噪声性能研究  

Anti-noise performance of cross voltage measurement pattern in EIT

作　　者：罗辞勇[1] 陈民铀[1] 王平[1] 何为[1] 

机构地区：[1]输配电装备及系统安全与新技术国家重点实验室重庆大学电气工程学院,重庆400044

出　　处：《仪器仪表学报》2009年第1期14-19,共6页Chinese Journal of Scientific Instrument

基　　金：国家863(2006AA02Z4B7)资助项目

摘　　要：电阻抗成像对噪声比较敏感,目前电阻抗成像主要采用相邻测量模式,其抗噪声性能比较差。交叉测量模式是在所有非电流注入电极对上做灵活选择,使得测量电压的幅值普遍高于相邻测量模式。在噪声源一定的情况,整体提高测量信号的信噪比。在仿真和实验当中,采用快速一步牛顿误差重构(FNOSER)静态和动态算法比较两种测量模式的重构图像质量。仿真和实验结果表明交叉测量方式优于相邻测量模式,该模式提高了信噪比,减小了测量电压的动态变化,重构图像伪迹较少,具有较好的抗噪声性能。Electrical Impedance Tomography （EIT） is sensitive to noise. At present, EIT instruments mainly adopt adjacent measurement pattern, which has poor anti-noise performance. The principle of cross voltage measurement pattern （CVMP） is to address all recording electrodes flexibly and make the recorded voltage higher than that of adjacent measurement pattern. While the noise is fixed, CVMP can enhance the SNR of the measurement signals. The Fast Newton＇s One Step Error Reconstructor （FNOSER） static and dynamic algorithms were used to compare the performances of the two patterns. Compared with adjacent measurement pattern, the proposed measurement pattern improves SNR and anti-noise capability, dramatically reduces the dynamic change of the measured electrode voltages and produces clear image with less artificial inhomogeneities.

关 键 词：电阻抗成像 交叉测量模式 图像重构 

分 类 号：TM152[电气工程—电工理论与新技术]