Correlation between Imprint and Long-Time Polarization Reversal under Low Fields in Ferroelectric Thin Films  

作　　者：江安全 汤庭鳌 

机构地区：[1]ASIC and System State Key Laboratory, Department of Microelectronies, Fudan University, Shanghai 200433

出　　处：《Chinese Physics Letters》2009年第1期321-324,共4页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant No 60776054, the Shanghai Pujiang Programme （No 07pj14008）, NCETFDU, and the Programme for Professor ＇of Special Appointment （Eastern Scholar） at Shanghai Institutions of Higher Learning.

摘　　要：Time interval of slow polarization reversal in ferroelectric thin films is broadened over more than two decades to disobey the classical Kolmogorov-A vrami-Ishibashi （KAI） equation as the applied field approaches the coercive field of domain switching. The assumption of a Lorentzian distribution of logarithmic waiting times of reversed domain nucleation in this equation can resolve this dilemma. In our work, we explain this equation from the coercive-voltage distribution in thin films, and derive a similar function to describe slow polarization reversal from the consideration of a long-time imprint effect rather than the KAI model.Time interval of slow polarization reversal in ferroelectric thin films is broadened over more than two decades to disobey the classical Kolmogorov-A vrami-Ishibashi （KAI） equation as the applied field approaches the coercive field of domain switching. The assumption of a Lorentzian distribution of logarithmic waiting times of reversed domain nucleation in this equation can resolve this dilemma. In our work, we explain this equation from the coercive-voltage distribution in thin films, and derive a similar function to describe slow polarization reversal from the consideration of a long-time imprint effect rather than the KAI model.

关 键 词：field emission molybdenum dioxide enhancement factor 

分 类 号：O484[理学—固体物理]