A Closed-Form Model for Position-Dependent Potential across the Channel in DG-MOSFETs  

作　　者：李萌 唐建石 吕阳 余志平 

机构地区：[1]Institute of Microelectronics, Tsinghua University, Beijing 100084

出　　处：《Chinese Physics Letters》2009年第1期353-355,共3页中国物理快报（英文版）

摘　　要：A closed-form model for electrostatic potential distribution in the direction normal to the channel for double-gate （DG） MOSFETs is presented. The effects of doping （NA for nMOS） and minority carriers both are taken into account for the first time, in solving Poisson＇s equation analytically. Excellent agreement between model-predicted results and numerical device simulation is achieved for a wide range of body thickness, light or high channeldoping, under various bias conditions. This complete closed form for position-dependent potential distribution has wide applications for MOS compact modelling and device design.A closed-form model for electrostatic potential distribution in the direction normal to the channel for double-gate （DG） MOSFETs is presented. The effects of doping （NA for nMOS） and minority carriers both are taken into account for the first time, in solving Poisson＇s equation analytically. Excellent agreement between model-predicted results and numerical device simulation is achieved for a wide range of body thickness, light or high channeldoping, under various bias conditions. This complete closed form for position-dependent potential distribution has wide applications for MOS compact modelling and device design.

关 键 词：field emission molybdenum dioxide enhancement factor 

分 类 号：TN386[电子电信—物理电子学]