Correlation between Displacement Damage Dose and Proton Irradiation Effects on GaInP/GaAs/Ge Space Solar Cells  

作　　者：刘运宏 王荣 崔新宇 王永霞 

机构地区：[1]Key Laboratory of Beam Technology and Materials Modification of Ministry of Education, Beijing Normal University, Beifing 100875 [2]College of Nuclear Science and Technology, Beijing Normal University, Beijing 100875 [3]Beijing Radiation Center, Beijing 100875 [4]Tianjin Institute of Power Sources, Tianjin 300381

出　　处：《Chinese Physics Letters》2009年第2期195-197,共3页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant No 10675023, and Beijing Excellent Personality Foundation.

摘　　要：The irradiation effects of 0.28-2.80 MeV protons on GalnP/GaAs/Ge solar cells have been analysed, and then correlated with the displacement damage dose. The results of I-V and spectral response measurements, combined with the SRIM-derived vacancies produced rates, show that the degradation of the solar cells is largely determined by the displacement damage of the GaAs sub-cell. Thus the SRIM-derived NIEL values for protons in the GaAs sub-cell are used to calculate the displacement damage dose. It is shown that the irradiation effects of the solar cells caused by protons at different energies are correlated well with the aid of displacement damage dose.The irradiation effects of 0.28-2.80 MeV protons on GalnP/GaAs/Ge solar cells have been analysed, and then correlated with the displacement damage dose. The results of I-V and spectral response measurements, combined with the SRIM-derived vacancies produced rates, show that the degradation of the solar cells is largely determined by the displacement damage of the GaAs sub-cell. Thus the SRIM-derived NIEL values for protons in the GaAs sub-cell are used to calculate the displacement damage dose. It is shown that the irradiation effects of the solar cells caused by protons at different energies are correlated well with the aid of displacement damage dose.

分 类 号：TM914.4[电气工程—电力电子与电力传动] TN304.23[电子电信—物理电子学]