NCD/Si_3N_4界面接触应力分析  

Analysis of Interfacial Contact Stress on NCD/Si_3N_4

作　　者：任卫涛[1] 卢文壮[1] 杨春[1] 左敦稳[1] 徐锋[1] 

机构地区：[1]南京航空航天大学江苏省精密与微细制造技术重点实验室,南京210016

出　　处：《硅酸盐通报》2009年第1期16-20,26,共6页Bulletin of the Chinese Ceramic Society

基　　金：国家自然科学基金资助项目(No.50605032);江苏省自然基金资助项目(No.BK2006189;No.BK2007193)

摘　　要：本文运用有限元分析软件MSC. patran/marc对弹性接触状态下NCD/Si3N4进行了接触应力分析,研究了NCD膜弹性模量、膜厚及载荷等因素对NCD/Si3N4界面剪切应力场分布的影响。结果表明:接触状态下NCD/Si3N4最大剪切应力产生于NCD膜与Si3N4基体结合面;弹性模量对NCD膜内部剪切应力场分布、最大剪切应力值及其产生位置影响显著;膜厚影响NCD膜内部剪切应力场分布;载荷与最大剪切应力值约成线形比例关系,对剪切应力场分布无明显影响。The contact stress of NCD/Si3N4 in elastic contact condition was analyzed using MSC. patran/ marc. Factors such as elastic modulus, thickness of the NCD film and loads which affect the shear stress field distribution of Si3N4/NCD film were investigated. The results show that the maximum shear stress was present at the interface between NCD film and Si3N4 substrate. Elastic modulus has a significant effect on inner shear stress field distribution of NCD film, and also affects the value and the position of the maximum shear stress. The shear stress in NCD film is lower when the film thickness is thicker or thinner than 10 μm. There is a linear proportional relationship between loads and the maximum shear stress.

关 键 词：NCD膜 接触分析 剪切应力 有限元 

分 类 号：TB30[一般工业技术—材料科学与工程]