界面SiO_2层对SiC/Al电子封装材料热膨胀系数的影响  

Influence of Interface on the Coefficient of Thermal Expansion of SiC/Al Electronic Packaging Composite

作　　者：王涛[1] 

机构地区：[1]西安科技大学材料系,西安710054

出　　处：《硅酸盐通报》2009年第1期71-75,共5页Bulletin of the Chinese Ceramic Society

摘　　要：用无压浸渗的方法制备了高体积分数的SiC/Al复合材料。通过改变SiC预制样品的烧结工艺来改变SiC和Al的界面状况,分析了SiC表面SiO2层的变化对SiC/Al复合材料的热膨胀系数的影响。用无压浸渗的方法可得到常温下热膨胀系数为(5.68～7.12)×10-6/K的SiC/Al复合材料。颗粒大小一定时,复合材料的热膨胀系数随着SiO2界面层的厚度增加而减小。当界面SiO2层厚度从45nm增加到2100nm时,常温下热膨胀系数从7.12×10-6/K减小到5.68×10-6/K。High volume fraction SiC/Al electronic packaging composite was fabricated by the pressureless infiltration technology. The influence of the SiO2 layer on the surface of SiC particles on the coefficient thermal expansion of SiC/Al composite was analyzed by alternating forming and sintering technology. When particle size is fixed, the coefficient thermal expansion of composite will decrease from 7. 12 ×10^-6/K to 5.68 ×10^-6/K with the increase of interfacial thickness from 45 nm to 2100 nm.

关 键 词：碳化硅/铝复合材料 界面 热膨胀系数 

分 类 号：TB33[一般工业技术—材料科学与工程]