负电子亲合势GaAs光电阴极稳定性的研究  

STABILITY OF NEA GaAs PHOTOCATHODE

作　　者：米侃[1] 张景文[1] 赛小峰[1] 何益民[1] 高鸿楷[1] 侯洵[1] 

机构地区：[1]中国科学院西安光学精密机械研究所半导体室

出　　处：《光子学报》1998年第2期106-109,共4页Acta Photonica Sinica

摘　　要：本文采用在超高真空系统中引入少量Ａｒ气及在激活到最高灵敏度时维持一定Ｃｓ蒸气压的方法，改进了激活系统的环境气氛，使阴极在台内的寿命得到极大地延长，为封管提供了足够的时间文中还探讨了影响阴极稳定性的重要因素。The method—introducing a small amount of gas Ar to our UHV(ultra high vacuum)system and maintaining certain Cs pressure while the highest sensitivity arrived—has been developed in our activating process.An improved circumstance of UHV and a relative long lifetime NEA GaAs photocathode was obtained.This offered enough time to seal tube.We have also discussed some important facts which influence the stability of NEA GaAs photocathode and provide practical way to improve the stability of the NEA GaAs photocathode further.

关 键 词：光电阴极 稳定性 负电子亲合势 砷化镓 

分 类 号：TN203[电子电信—物理电子学] TN304.23