光栅外腔半导体激光器GHz射频调制特性研究  

Characteristics of the Grating External-Cavity Diode Laser under GHz Radio-Frequency Modulation

作　　者：赵江艳[1] 杨保东[1] 何军[1] 张天才[1] 王军民[1] 

机构地区：[1]量子光学与光量子器件国家重点实验室,山西大学光电研究所,山西太原030006

出　　处：《量子光学学报》2009年第1期84-90,共7页Journal of Quantum Optics

基　　金：国家自然科学基金(60578018,10434080);国家重大研究计划课题(2006CB921102);教育部新世纪优秀人才支持计划(NCET-07-0524);高等学校博士点专项(20070108003);山西省自然科学基金(2007011003);山西省回国留学人员基金

摘　　要：研究了光栅外腔半导体激光器(ECDL)对射频频率调制的响应特性,分析了射频频率调制时光栅外腔对半导体激光器的边带信号的影响。实验中测量了GHz射频频率调制的ECDL输出的边带信号随射频信号功率、注入电流、光栅外腔长度的变化情况。证实了当射频调制频率等于光栅外腔自由光谱区的整数倍时,ECDL输出的边带信号可在一定程度上得到增强。The response characteristics of grating external-cavity diode laser （ECDL） to direct GHz radiofrequency （RF） modulation of the injection current of the diode laser are experimentally investigated, and the effect of the grating external cavity to the sideband signal of diode laser is analyzed. In experiment, the variation of the sidebands of ECDL under GHz RF modulation is measured along with the RF power, the length of grating external cavity and the magnitude of injection current. When the frequency of RF signal equals to the multiple of.the free spectra range （FSR） of grating external cavity, the sideband signal of EDCL under RF modulation can he enhanced. This point is also clearly confirmed in the experiment.

关 键 词：光栅外腔半导体激光器 射频调制 自由光谱区 调制系数 注入电流 

分 类 号：O431[机械工程—光学工程]