动态阈值nMOSFET阈值电压随温度退化特性  

Degradation of Threshold Voltage in Dynamic Threshold nMOSFETs with Temperature

作　　者：毕津顺[1] 海潮和[1] 

机构地区：[1]中国科学院微电子研究所

出　　处：《固体电子学研究与进展》2008年第4期475-478,500,共5页Research & Progress of SSE

摘　　要：对动态阈值nMOSFET阈值电压随温度退化特性进行了一阶近似推导和分析。动态阈值nMOSFET较之普通nMOSFET,降低了阈值电压温度特性对温度、沟道掺杂浓度及栅氧厚度等因素的敏感程度。讨论了动态阈值nMOSFET优秀阈值电压温度特性的内在机理。动态阈值nMOSFET优秀的阈值电压随温度退化特性使之非常适合工作于高温恶劣环境。The temperature dependence of the threshold voltage of dynamic threshold nMOS- FETs is modeled and analyzed. The threshold voltage in common nMOSFETs shows greater dependence on temperature, channel doping concentration and gate oxide thickness than that in dynamic threshold nMOSFETs. The mechanism of smaller threshold voltage degradation with temperature in dynamic threshold nMOSFETs is discussed. The dynamic threshold voltage MOS- FETs with excellent performance will find a place in the applications of high temperature field.

关 键 词：温度退化特性 动态阈值 n型场效应晶体管 

分 类 号：TN386[电子电信—物理电子学]