叠烧对ZnO压敏电阻中Bi_2O_3挥发的控制  

Superposition sintering to control Bi_2O_3 vaporization in ZnO varistors

作　　者：吴振红[1] 方建慧[2] 徐东[3] 巫欣欣[2] 施利毅[1,3] 

机构地区：[1]上海大学纳米科学与技术研究中心,上海200444 [2]上海大学理学院,上海200444 [3]上海大学材料科学与工程学院,上海200072

出　　处：《电子元件与材料》2009年第3期7-9,共3页Electronic Components And Materials

基　　金：上海市科委学科带头人计划资助项目(No.07XD14014);上海市科委技术创新人才团队建设专项资助项目(No.06DZ05902);上海市教委第五期重点学科资助项目(No.J50102)

摘　　要：采用高能球磨法制备ZnO压敏电阻混合粉体。用XRD、SEM对其形貌和微观结构进行了表征。研究了叠烧烧结时,不同位置ZnO压敏电阻中Bi2O3的挥发情况及对其电性能的影响。结果表明:中心位置处ZnO压敏电阻的非线性系数为31,较表层提高100%;其漏电流为6.0μA,电位梯度为345V/mm。Bi2O3的挥发,呈现从中心到表层逐步加剧的趋势。The ZnO varistor mixed powder was prepared by high energy ball milling ZnO, Bi2O3, Sb2O3, Cr2O3, Co2O3 and MnO2 together. The morphology and microstructure of ZnO varistors were characterized by XRD and SEM. The Bi2O3 vaporization from ZnO varistors at different locations by superposition sintering and its influence on the electric properties of ZnO varistors were studied. The results show that the nonlinearity coefficient of the center location for ZnO varistor is 31 higher up to 100% compared to the the surfuce ones. Its leakage current is 6.0 μA and voltage gradient is 345 V/mm. The vaporization of Bi2O3 appears gradual increase trend from center location to surface in ZnO varistor.

关 键 词：ZNO压敏电阻 叠烧 BI2O3 电性能 

分 类 号：TB34[一般工业技术—材料科学与工程]