Al掺杂ZnO薄膜的表面形貌和光学性质  

Surface Topography and Optical Properties of Al-doped ZnO Thin Films by Sol-gel Process

作　　者：吕建国[1,2] 宋学萍[1] 孙兆奇[1] 

机构地区：[1]安徽大学物理与材料科学学院,合肥230039 [2]合肥师范学院物理与电子工程系,合肥230061

出　　处：《半导体光电》2009年第1期71-74,共4页Semiconductor Optoelectronics

基　　金：国家自然科学基金项目(50642038);教育部博士点专项基金项目(20060357003);安徽省人才专项基金项目(2004Z029);安徽科技厅重点项目(07020203009);安徽省高等学校省级自然科学研究项目(KJ2007B135);安徽省高等学校青年教师科研资助计划项目(2006jql192);安徽大学人才队伍建设基金资助课题

摘　　要：用原子力显微镜、紫外-可见分光光度计和荧光光谱仪观察采用溶胶-凝胶法制备的Al掺杂ZnO薄膜的表面形貌、透射光谱和光致发光谱。结果表明,Al掺杂量为0.5at%的ZnO薄膜经550℃退火处理后,粗糙度为1.817,Al掺杂量为1.0at%的ZnO薄膜经600℃退火处理后,粗糙度增大到4.625。样品在可见光范围内的平均透过率均大于80%。当激发波长为325 nm时,在397 nm(3.13 eV)附近出现紫外发光峰;当激发波长为360 nm时,在443 nm(2.80 eV)附近出现蓝色发光峰。探讨了样品的蓝光发光机制。Surface topography, optical transmittance spectra and photoluminescence spectrum of Al-doped ZnO thin films, prepared by sol-gel method, were analyzed by atomic force microscope, UV-visible spectrophotometer and fluorescent spectrometry. Results show that roughness of the Al-doped ZnO thin film with the Al doping concentration 0.5at% annealed at 550 ℃ is 1. 817, but that with the Al doping concentration 1.0at% annealed at 600℃ is 4. 625. All films have an average optical transparency over 80 % in the visible range. The samples have an UV luminescence at around 397 nm（3.13 eV） or a blue luminescence at around 443 nm（2.80 eV） when that were excited by using a 325 nm or a 360 nm ultraviolet light respectively. The mechanism of blue luminescence was discussed.

关 键 词：Al掺杂ZnO薄膜 粗糙度 光致发光 透射光谱 

分 类 号：O484[理学—固体物理]