掺铜TiO2薄膜的制备及结构与光学性能的研究  

Preparation of TiO_2 Thin Films Doped with Cu and Study on Its Structure and Optical Properties

作　　者：高飞[1] 吴再华[1] 刘晓艳[2] 

机构地区：[1]湖南信息职业技术学院,长沙410200 [2]中南大学材料科学与工程学院,长沙410083

出　　处：《半导体光电》2009年第1期87-89,98,共4页Semiconductor Optoelectronics

摘　　要：采用双靶直流磁控共溅射法制备了掺铜TiO2薄膜,通过控制Cu靶的溅射功率改变Cu的掺杂量,研究了掺铜对TiO2薄膜的结构、光吸收及光催化性能的影响。结果表明:掺Cu能够改善薄膜的表面形貌与结晶质量,提高薄膜的光吸收性能。随着掺铜量的增加,TiO2薄膜的锐钛矿(101)衍射峰越来越强,且吸收边逐渐红移。Cu靶的溅射功率大于3 W,薄膜中就会出现CuO晶相。掺Cu后,TiO2薄膜的光催化性能明显增强。随着Cu的溅射功率的增大,TiO2薄膜的光催化性能先增强,后减弱。Cu的溅射功率为5 W的样品光催化性能最好。Cu-doped TiO2 thin films were prepared by DC reactive magnetron co-sputtering with two targets. The doping proportion of Cu was altered by different sputtering power. The effect of doped-Cu on the microstructure, absorption and photocatalytic properties of TiOz thin films was studied respectively. The results show that Cu-doped TiO2 thin films have smoother surfaces, more excellent crystal quality and absorption properties. The content of the anatase phase increases and the absorption edge becomes red-shift gradually with increasing the sputtering power of Cu. When the sputtering power is more than 3 W, CuOcrystal phase is formed. Doped with Cu, the photocatalytie properties of TiO2 thin films increase obviously. With increasing the sputtering power of Cu, photocatalytic properties of TiO2 thin films increase and then decrease. The sample with a Cu sputtering power of 5 W has the best photocatalytic properties.

关 键 词：TIO2薄膜 双靶直流磁控共溅射 铜掺杂 

分 类 号：O484.4[理学—固体物理]