二维短沟道MOSFET阈值电压分析模型  

Analysis of 2-D Short-Channel MOSFET Threshold Voltages Model

作　　者：李海霞[1] 毛凌锋[1] 

机构地区：[1]苏州大学电子信息学院,江苏苏州215021

出　　处：《半导体技术》2009年第3期254-257,共4页Semiconductor Technology

基　　金：国家自然科学基金资助项目(60606016)

摘　　要：随着器件尺寸的进一步减小,由量子效应导致的能带分裂对MOSFET中阈值电压特性的影响变得越来越重要。提出了一个包含量子效应(QME)的短沟道金属氧化物场效应晶体管(MOSFET)分析的阈值电压模型,该模型建立在求解包含量子校正的泊松方程的基础上。分析在泊松方程中考虑量子效应后建立的分析的阈值电压模型可知:随着器件尺寸的减小,由量子效应和短沟道效应引起的阈值电压的升高变得越来越严重。本模型的优点是没有引入额外的物理参数。The split of the band caused by the quantum mechanism （QM） effects plays a more and more significant effect on the threshold voltage properties in MOSFET as the CMOS technology scales down. An analytical 2D model taking into account the QM effects for the threshold voltages characteristics of shortchannel MOS transistors was proposed on the basis of the solution of the developed quantum correction Poisson equation. This model clearly illustrates the increased threshold voltage caused by QM effects, and the shortchannel effects become more obvious after QM effects were considered. The attractive feature in this model is that no addition parameter is used to take into account the quantum effects.

关 键 词：深亚微米半导体器件 解析阈值电压模型 量子机制效应 

分 类 号：TN386.1[电子电信—物理电子学]