全金属微电极阵列细胞电融合芯片的研制  

The Manufacture of Total Metal Microelectrode Cell Electro-Fusion Chip

作　　者：曹毅[1,2] 杨军[1] 胡宁[1] 杨静[1] 夏斌[1] 郑小林[1] 

机构地区：[1]重庆大学生物工程学院,重庆400030 [2]重庆城市管理职业学院电子信息工程系,重庆400055

出　　处：《传感技术学报》2009年第2期171-174,共4页Chinese Journal of Sensors and Actuators

基　　金：国家863计划资助项目(2006AA04Z343);国家自然科学基金资助项目(30500120,30870661,30770569);重庆市科技重大专项资助项目(CSTC2008AA5010)

摘　　要：研制了以硅为基底、金属铜(Cu)材料作为微电极的细胞电融合芯片。在500μm厚的硅基底上应用离子刻蚀技术,刻蚀出与所需得到的微电极相同形状的槽,然后高温下使硅片表层形成二氧化硅绝缘层,在刻蚀槽的底部形成种子层(Ta/Cu材料),通过电镀在槽中形成金属微电极,应用湿法刻蚀去除表层硅,得到纯金属微电极。铜金属微电极其导电率高,减小了电压衰减,使细胞电融合芯片中电场分布一致性好。该方法利用刻蚀的硅模具和电镀工艺解决了lift-off制造的金属微电极较薄的难题,分别采用热氧化和等离子增强化学气相淀积(PECVD)工艺制作的二氧化硅薄膜也增强了芯片抗腐蚀能力。在利用黄瓜叶肉细胞的细胞排队和融合实验中,实验效果比现有硅微阵列芯片要好。A Cu microelectrode array based cell-fusion chip was fabricated on a silicon substrate. On this 500 μm thicken silicon wafer, reactive ion etching （RIE） technology was used to fabricate some grooves with the same pattern as the microelectrodes. Under a high-temperature condition, the surface layer of silicon substrate was oxygenated to form silicon dioxide insulated layer. In following step, （Ta/Cu） seed layer was evaporated on the bottom of the eroded grooves, on which metal microelectrodes was subsequently electroplated. Then surface silicon layer was removed by wet etching technology to obtain pure metal microelectrode. Cu microelectrode with high conductivity and low voltage attenuation is helpful for obtaining high-consistency electric field distribution. In this method, eroded silicon pattern and electroplating technology were used to overcome the embarrassment （e. g. the fabricated metal microelectrode is too thin） in the lift-off technique. High-temperature oxidation or plasma-enhanced chemical vapor deposition （PECVD） techniques was adopted to prepare silicon dioxide film to improve the corrosion resistance. Cell alignment and fusion experimental effect on this chip was better than that on silicon microelectrode array based chip.

关 键 词：微流控芯片 细胞融合 电融合 微电极 

分 类 号：Q813.2[生物学—生物工程]