热壁外延生长 ZnSe 薄膜的质量研究  

Crystalline Quality Study of ZnSe Film Grown by Hot Wall Epitaxy

作　　者：史向华 

出　　处：《长沙水电师院学报（自然科学版）》1998年第1期41-44,共4页

摘　　要：研究了热壁外延法（ＨＷＥ）在经两种不同处理方法的ＧａＡｓ衬底上生长的ＺｎＳｅ薄膜质量．俄歇电子能谱图（ＡＥＳ）分析表明，经Ｓ纯化的ＧａＡｓ表面大约由一层单原子层所覆盖，从而减少了ＺｎＡｓ／ＧａＡｓ界面态密度．用喇曼光谱（Ｒａｍａｎ）的空间相干模型，对不同处理方法的ＧａＡｓ上生长的ＺｎＳｅ处延膜的一级ＬＯ声子喇曼谱线形变化进行分析，定量判断出ＺｎＳｅ外延膜质量的优劣．分析认为，经Ｓ纯化ＺｎＳｅ／ＧａＡｓ具有较好的质量．理论分析与实验分析相一致．ZnSe films were grown by hot wall epitaxy on GaAs substrates teated with two methode and have been studied their crystalline qualities.A quantitative AES analysis showed that the GaAs surface by S-passivated was coverede by about one monolayer of surfur atoms,and reduced the state density of ZnSe/GaAs interface surface.The spatial correlation model of Raman scattering has been used for interpreting the line shapes of the first-order longitudinal-optical phonon of ZnSe epitaxial layers grown on GaAs substrates treated by a conventional method and S-passivated method,and quantitatively studing the crystalline of the ZnSe epilayer.The results have demonstrated that the ZnSe films grown on the GaAs substrates passivted by S 2Cl 2 solutions have better crystalline quality.The experimental results coincide with the theoretical predictions very well.

关 键 词：热壁外延 硒化锌薄膜质量 薄膜生长 

分 类 号：TB43[一般工业技术] O484.4[理学—固体物理]