氧化锡纳米带的制备和光致发光性能研究  

Systhesis and Photoluminescence Character of SnO2 Nanobelts

作　　者：张翔晖[1] 王月娇[1] 韩祥云[1] 高义华[1] 黄德修[1] 张端明[1] 

机构地区：[1]华中科技大学武汉光电国家实验室（筹）／物理学院,湖北武汉430074

出　　处：《纳米科技》2009年第1期18-22,57,共6页

基　　金：973计划前期研究专项（No.2006CB708310）,湖北省人才基金（No.2007ABB008）,华中科技大学基金资助项目fNo.2006Z007B）

摘　　要：采用常压热蒸发锡粉的方法制备出尺寸均匀、表面光滑致密的SnO2纳米带。通过高温退火处理，氧化锡纳米带从Sn304和SnO2的混合相转变为SnO2金红石相。深入研究了SnO2纳米结构的光致发光性能，结果显示，退火前SnO2纳米带在600nm附近有一较强的发光峰，在375nm有一弱发光峰；退火处理后，375nm处的PL峰消失，此现象可能是由于退火后纳米带中晶格缺陷减少而导致。SnO2 nanobelts with smooth surface and uniform size were fabricated by direct thermal evaporation of tin powders under atmosphere pressure. It is found that high-temperature annealing is effective to transform the mixed phases of Sn3O4 and SnO2 to the rutile phase of SnO2. The photoluminescence characteristics of SnO2 nanostructures were studied thoroughly. The results showed that there were two PL peaks, the stronger is around about 600 nm and the weaker ia around 375nm before annealing. After annealing, the peak at 375nm disappeared, which may be due to the decrease of lattice defects in the SnO2 nanobehs.

关 键 词：氧化锡 纳米带 光致发光 

分 类 号：TB34[一般工业技术—材料科学与工程]