导模法生长α-Al2O3：C晶体  

Growth of α-Al_2O_3:C Crystal by Edge-Defined,Film-Fed Growth Technique

作　　者：杨新波[1,2] 李红军[1] 毕群玉[3,2] 程艳[3,2] 苏良碧[1] 唐强[4] 徐军[1] 

机构地区：[1]中国科学院上海硅酸盐研究所,上海201800 [2]中国科学院研究生院,北京100049 [3]中国科学院上海光学精密机械研究所,上海201800 [4]中山大学物理学系,广州510275

出　　处：《无机材料学报》2009年第2期255-258,共4页Journal of Inorganic Materials

基　　金：国家自然科学基金(60607015);国家863项目(2006AA03A104)

摘　　要：以高纯Al2O3为原料,利用石墨发热体和石墨保温桶为碳源,采用导模法生长了α-Al2O3∶C晶体,研究了氢气退火后得到的α-Al2O3∶C晶体的热致发光和光致受激发光特性.α-Al2O3∶C晶体在460K具有单一一级动力学热致发光峰,热致发光发射波长位于415nm.α-Al2O3∶C晶体的光致受激发光曲线呈指数衰减,衰减曲线由快衰减和慢衰减两部分组成.α-Al2O3∶C晶体的热致发光和光致受激发光剂量响应曲线具有线性-亚线性-饱和的特点,其中热致发光剂量响应在5×10^-6 -0.2Gy范围内呈现良好的线性关系,饱和剂量为10Gy;光致受激发光剂量响应在5×10^-6 -10Gy范围内呈现良好的线性关系,饱和剂量为30Gy.α-Al2O3：C crystal was grown by Edge-Defined, Film-Fed Growth Technique （EFG） in which graphite heating unit and shield acted as the carbon source and high purity Al2O3 was used as the raw material. Thermoluminescence （TL） and optically stimulated luminescence （OSL） properties of as-grown crystal after annealing in H2 were investigated. The crystal shows a single one-order kinetic glow peak at 460K and blue emission band at 415nm. OSL decay curve of α-Al2O3：C crystal shows exponential characteristic. The decay curve is made up of two components, i.e. the faster component and the slower component. The TL and OSL responses of α-Al2O3：C crystal show linear-sublinear-saturation characteristics. The TL exhibits good linear dose response in the dose range from 5 × 10^-6 to 0.2Gy and saturation is about 10Gy. The OSL exhibits good linear dose response in the dose range from 5 × 10^-6 to 10Gy and saturation is about 30Gy.

关 键 词：α-Al2O3∶C 热致发光 光致受激发光 导模法 

分 类 号：TG174[金属学及工艺—金属表面处理] O614[金属学及工艺—金属学]