稀土掺杂氧化锌压敏瓷的研究进展  

Research Progress of Rear Earth Doped ZnO-based Varistor Ceramics

作　　者：巫欣欣[1,2] 张剑平[2] 施利毅[1,3] 徐东[1,3] 吴振红[1] 

机构地区：[1]上海大学纳米科学与技术研究中心,上海200444 [2]上海大学理学院,上海200444 [3]上海大学材料科学与工程学院,上海200072

出　　处：《电瓷避雷器》2009年第1期22-26,共5页Insulators and Surge Arresters

基　　金：上海市科委创新团队资助项目(编号:06DZ05902);海市科委学科带头人计划(编号:07XD14014);上海市教委第五期重点学科资助项目(编号:J50102)

摘　　要：综述了近年来稀土掺杂氧化锌压敏瓷中的研究进展。掺杂稀土氧化物可明显的减小ZnO晶粒尺寸,使晶粒尺寸分布均匀;其中掺杂Y2O3可使ZnO-Bi2O3系压敏瓷晶粒尺寸由11.3μm降到5.4μm,掺杂Er2O3使晶粒尺寸由1.60μm减小到1.06μm。显著提高了ZnO压敏瓷的电位梯度、降低了漏电流。其中在ZnO-Bi2O3系压敏瓷中掺杂Y2O3,可获得电位梯度约为270 V/mm、漏电流为3μA、压比为1.66的电阻片,在ZnO-PrA6O11系压敏瓷中掺杂Er2O3,电位梯度可提高到416.3 V/mm,漏电流从28.2μA降低到9.8μA。The research progress of rear earth doped ZnO-based varistor ceramics was reviewed. It can improves microstructure, decreased ZnO grain size and homogenizing the grain size distribution. Y2O3 doping makes the ZnO-Bi2O3 varistor grain size decreased from 11.3 μm to 5.4 μm, Er2O3 doping makes the grain size decreased from 1.60 μm to 1.06 μm. The voltage gradient of the ZnO-based varistor is enhanced and the leakage current decreased. Varistor of ZnO-Bi2O3 based ceramics with Y2O3 doping has voltage gradient of about 270 V/mm, leakage current of 3 μA and voltage ratio of 1.66. Doping Er2O3 into ZnO-PrA6O11 based varistor may obtain enhanced voltage gradient of 416.3 V / mm and reduced leakage current from 28.2 μA to 9.8 μA.

关 键 词：氧化锌压敏电阻片 稀土氧化物 电性能 

分 类 号：TM54[电气工程—电器]