垂直布里奇曼法生长的Cd_(0.8)Mn_(0.2)Te单晶体中Te沉淀相分析  

Analysis of Te precipitates in Cd_(0.8) Mn_(0.2) Te single crystal growing by vertical Bridgman method

作　　者：栾丽君[1] 介万奇[1] 

机构地区：[1]西北工业大学材料学院,陕西西安710072

出　　处：《电子显微学报》2009年第1期57-61,共5页Journal of Chinese Electron Microscopy Society

基　　金：国家自然科学基金资助项目(No.50336040)~~

摘　　要：Cd1-xMnxTe(CdMnTe,CMT)是制备光学隔离器、太阳能电池、x射线和γ射线探测器的优选材料。本实验采用垂直布里奇曼(VB)法成功地生长出Cd0.8Mn0.2Te单晶体。用JEM-3010型高分辨透射电子显微镜(HRTEM)观察了CMT晶体中的纳米级Te沉淀。选区电子衍射得到了Te沉淀与CMT基体两相的合成电子衍射图。计算出单斜Te沉淀的晶胞参数为:a=0.31nm,b=0.79nm,c=0.47nm,β=92.71°。确定了Te沉淀和CMT基体的取向关系为(0■1)Te//(■02)CMT,[100]Te//[111]CMT。最后,对Te沉淀(缺陷)的形成原因进行了分析。Cd_ 1-x Mn_xTe （CdMnTe, CMT） crystal is the dominant material for optical isolators, solar cell, x-ray and γ-ray detectors, etc. Cd_ 0.8 Mn_ 0.2 Te single crystal was successfully grown by using Vertical Bridgman （VB） method in our laboratory. In this paper, nano-scale Te precipitates in CMT crystal were observed using JEM-3010 high resolution transmission electron microscopy （HRTEM）. When selected electron diffraction was made, Te precipitates and CMT matrix two-phase electron diffraction patterns were observed. It was confirmed to be monoclinic phase Te precipitates with cell parameters of a=0.3104 nm,b=0.789 nm,c=0.4683 nm and β=92.71°. The orientational relationship between the precipitate and the matrix was determined to be （031） Te （202） CMT . Finally, the formation of the Te precipitates （defects） was analyzed.

关 键 词：垂直布里奇曼(VB)法 稀释磁性半导体 Cd0.8Mn0.2Te Te沉淀 

分 类 号：O782.9[理学—晶体学] TN304.7[电子电信—物理电子学]