MOS电阻阵列非均匀性校正技术研究  

Researches on Nonuniformity Correction Technologies for Resistor Array

作　　者：朱岩[1] 王仕成[1] 苏德伦[1] 张金生[1] 廖守亿[1] 

机构地区：[1]第二炮兵工程学院精确制导与仿真实验室,陕西西安710025

出　　处：《红外技术》2009年第3期148-151,155,共5页Infrared Technology

基　　金：国家自然科学基金资助项目(编号:60572061)

摘　　要：电阻阵列是动态红外景像产生器的主要发展方向,作为红外景像生成系统中的关键器件,其成像质量的好坏直接影响到整个红外景像生成系统的性能。多种原因导致电阻阵列具有一定的非均匀性,因此在使用之前必须对其进行非均匀性校正。对电阻阵列非均匀校正技术进行了研究,发现国外常用的数据测量方法对红外测量设备的性能以及实验环境的要求很高,而目前国内红外测量设备的性能很难满足要求。因此,结合国内实际情况和现有实验条件,对国外常用的数据测量方法做了改进,提出了更适合在现有实验条件下应用的数据测量方法,并介绍了一种简便的数据处理方法。仿真结果表明,采用改进后的数据测量方法可以获得比较令人满意的非均匀性校正效果。Resistor array is the main research direction of infrared scene generation devices. As the key device of the infrared scene generation system, the resistor array＇s performance significantly affects the performance of the whole system. However, the resistor array has a nonuniformity caused by many factors, so a prior nonuniformity correction （NUC） procedure must be done before the array is used. We studied the nonuniformity correction technologies for resistor array, and find that internal infrared measuring equipments can hardly satisfy the precision demand of the measurement methods developed by foreign laboratories. In this paper, a refined measurement method is proposed according to the actual internal fact and existing laboratory condition, and a simple data-processing method is introduced. The simulating result shows that a satisfying NUC result is achieved through the refined measurement method.

关 键 词：电阻阵列 非均匀性校正 稀疏网格 分段线性化 

分 类 号：TN216[电子电信—物理电子学]