Deep level defects in unintentionally doped 4H-SiC homoepitaxial layer  

作　　者：贾仁需 张义门 张玉明 王悦湖 张林 

机构地区：[1]Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University

出　　处：《Journal of Semiconductors》2009年第3期23-25,共3页半导体学报（英文版）

基　　金：supported by the State Key Development Program for Basic Research of China (No. 51327020202);the Key Fund of the Ministryof Education of China (No. 106150);the Xi’an Applied Materials Innovation Fund (No. XA-AM-200607).

摘　　要：Unintentionally doped 4H-SiC homoepitaxial layers grown by hot-wall chemical vapor deposition （HWCVD） have been studied using photoluminescence （PL） technique in the temperature range of 10 to 240 K. A broadband green luminescence has been observed. Vacancies of carbon （Vc） are revealed by electron spin resonance （ESR） technique at 110 K. The results strongly suggest that the green band luminescence, as shallow donor-deep accepter emission, is attributed to the vacancies of C and the extended defects. The broadband green luminescence spectrum can be fitted by the two Gauss-type spectra using nonlinear optimization technique. It shows that the broad-band green luminescence originates from the combination of two independent radiative transitions. The centers of two energy levels are located 2.378 and 2.130 eV below the conduction band, respectively, and the ends of two energy levels are expanded and superimposed each other.Unintentionally doped 4H-SiC homoepitaxial layers grown by hot-wall chemical vapor deposition （HWCVD） have been studied using photoluminescence （PL） technique in the temperature range of 10 to 240 K. A broadband green luminescence has been observed. Vacancies of carbon （Vc） are revealed by electron spin resonance （ESR） technique at 110 K. The results strongly suggest that the green band luminescence, as shallow donor-deep accepter emission, is attributed to the vacancies of C and the extended defects. The broadband green luminescence spectrum can be fitted by the two Gauss-type spectra using nonlinear optimization technique. It shows that the broad-band green luminescence originates from the combination of two independent radiative transitions. The centers of two energy levels are located 2.378 and 2.130 eV below the conduction band, respectively, and the ends of two energy levels are expanded and superimposed each other.

关 键 词：4H-SiC Homoepitaxial layers broadband green luminescence vacancies of carbon deep level defects 

分 类 号：TN304[电子电信—物理电子学]