基于Si-rich SiNx/N-rich SiNy多层膜结构电致发光特性研究  

Electroluminescence from Si-rich SiN_x/N-rich SiN_y multilayer light-emitting devices

作　　者：黄锐[1,2] 董恒平[1] 王旦清[1] 陈坤基[1] 丁宏林[1] 徐骏[1] 李伟[1] 马忠元[1] 

机构地区：[1]南京大学物理系,固体微结构物理国家重点实验室,南京210093 [2]韩山师范学院物理与电子工程系,潮州521041

出　　处：《物理学报》2009年第3期2072-2076,共5页Acta Physica Sinica

基　　金：国家重点基础研究发展计划(2006CB932202,2007CB613401);国家自然科学基金(90301009)资助的课题~~

摘　　要：利用等离子体增强化学气相沉积法制备了富硅氮化硅/富氮氮化硅多层膜,并以此氮化硅基多层膜作为有源层构建电致发光器件,在室温下观察到了较强的电致可见发光.在此基础上,研究多层膜结构中作为势垒层的富氮氮化硅层对器件电致发光性质的影响,实验结果表明通过改变势垒层的Si/N组分,调制其势垒高度,器件的电致发光效率可得到显著地提高.SiN-based multilayer light-emitting devices,which employed Si-rich SiNx/N-rich SiNy multilayer as luminescence active layer,were fabricated by plasma enhanced chemical vapor deposition （PECVD）. Strong visible electroluminescence （EL） from the devices was observed at room temperature. By adjusting the Si/N ratio of the barrier layer,the effect of barrier on the electroluminescence properties was further investigated. The experimental results show that the performance of the devices can be significantly improved by controlling the Si/N ratio of the barrier layer.

关 键 词：电致发光 多层膜 氮化硅 

分 类 号：O484.41[理学—固体物理]