Effect of growth temperature on morphology,structure and luminescence of Tb-doped BN thin films  

作　　者：刘泉林 于广华 姜勇 

机构地区：[1]State Key Laboratory for Advanced Metals and Materials,School of Materials Science & Engineering,University of Science and Technology Beijing [2]Advanced Materials Laboratory,National Institute for Materials Science

出　　处：《Chinese Physics B》2009年第3期1266-1269,共4页中国物理B（英文版）

基　　金：supported by the National Natural Science Foundation of China (Grant No 50672007);the NCET-06-0082;the MOST 973 Program of China (Grant No 2007CB936202)

摘　　要：This paper investigates the effect of growth temperature on morphology, structure and photoluminescence （PL） of Tb-doped boron nitride （BN） films grown by magnetron sputtering, and the relationships of growth-temperature- structure-PL by scanning electron microscopy, transmission electron microscopy and PL. The characteristic emission lines of the Tb^3＋ were observed in the PL spectra at room temperature. The 473-K-grown film is mainly consisted of amorphous BN particles. With the growth temperature increasing up to 1273 K, the amount of amorphous BN decreases, while the amount of turbostratic BN increases. Correspondingly, the PL intensities from the Tb^3＋ ions increase with the increase of temperature in the range of 473 1273 K.This paper investigates the effect of growth temperature on morphology, structure and photoluminescence （PL） of Tb-doped boron nitride （BN） films grown by magnetron sputtering, and the relationships of growth-temperature- structure-PL by scanning electron microscopy, transmission electron microscopy and PL. The characteristic emission lines of the Tb^3＋ were observed in the PL spectra at room temperature. The 473-K-grown film is mainly consisted of amorphous BN particles. With the growth temperature increasing up to 1273 K, the amount of amorphous BN decreases, while the amount of turbostratic BN increases. Correspondingly, the PL intensities from the Tb^3＋ ions increase with the increase of temperature in the range of 473 1273 K.

关 键 词：boron nitride rare earth doped PHOTOLUMINESCENCE thin film growth 

分 类 号：O484.1[理学—固体物理]