料层厚度对多热源SiC合成炉内CO温度变化的影响  

Effect of materials layer thickness on CO temperature change in multi-heat-source SiC furnace

作　　者：李成峰[1] 

机构地区：[1]西安科技大学研究生部,陕西西安710054

出　　处：《西安科技大学学报》2009年第2期231-235,共5页Journal of Xi’an University of Science and Technology

基　　金：国家自然科学基金资助项目(50174046);宁夏自治区科技攻关项目

摘　　要：利用自行设计的CO气体收集装置研究了料层厚度对多热源SiC合成炉内CO温度变化的影响。结果表明,在供电功率、供电时间、炉芯尺寸、炉芯数目等实验参数均相同的条件下,炉内CO温度随供电时间呈现近线性增大的变化趋势,料层越厚,距料层表面同位置处CO温度越低,CO温度的最大值、平均值、梯度值、温度增长速率越小。Effect of materials layer thickness on CO temperature changing was studied by self - designing experimental equipment, which is used for collecting CO gas in multi-heat-source SiC furnace. The results show that CO temperature inside the furnace takes on an approximate linear increasing change trend. Thicker materials layer less CO temperature, CO temperature maximum, CO temperature average, CO temperature grads, and increasing rate of CO temperature in the same distance from the surface of materials layer.

关 键 词：料层厚度 SiC合成炉 CO温度 

分 类 号：TF061.26[冶金工程—冶金物理化学]