Identification of Acceptor States in Li-N Dual-Doped p-Type ZnO Thin Films  

作　　者：张银珠 吕建国 叶志镇 何海平 陈兰兰 赵炳辉 

机构地区：[1]State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027 [2]School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798

出　　处：《Chinese Physics Letters》2009年第4期165-168,共4页中国物理快报（英文版）

基　　金：Supported by the National Basic Research Program of China under Grant No 2006CB604906, the National Natural Science Foundation of China under Grant Nos 50532060 （key project） and 50572095.

摘　　要：Li-N dual-doped p-type ZnO （ZnO：（Li, N）） thin films are prepared by pulsed laser deposition. The optical properties are studied using temperature-dependent photoluminescence. The Lizn-No complex acceptor with an energy 1evel of 138 me V is identified from the free-to-neutral-acceptor （e, A0 ） emission. The Haynes factor is about 0.087 for the Lizn-No complex acceptor, with the acceptor bound-exciton binding energy of 12meV. Another deeper acceptor state located at 248 meV, also identified from the （e, A0） emission, is attributed to zinc vacancy acceptor. The two acceptor states might both contribute to the observed p-type conductivity in ZnO：（Li,N）.Li-N dual-doped p-type ZnO （ZnO：（Li, N）） thin films are prepared by pulsed laser deposition. The optical properties are studied using temperature-dependent photoluminescence. The Lizn-No complex acceptor with an energy 1evel of 138 me V is identified from the free-to-neutral-acceptor （e, A0 ） emission. The Haynes factor is about 0.087 for the Lizn-No complex acceptor, with the acceptor bound-exciton binding energy of 12meV. Another deeper acceptor state located at 248 meV, also identified from the （e, A0） emission, is attributed to zinc vacancy acceptor. The two acceptor states might both contribute to the observed p-type conductivity in ZnO：（Li,N）.

分 类 号：TN943.3[电子电信—信号与信息处理] TQ170.7[电子电信—信息与通信工程]