Impurity Activation in MBE-Grown As-Doped HgCdTe by Modulated Photoluminescence Spectra  

作　　者：越方禹 陈路 吴俊 胡志高 李亚巍 杨平雄 褚君浩 

机构地区：[1]Key Laboratory of Polar Materials and Devices (Ministry of Education), East China Normal University, Shanghai 200241 [2]National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083 [3]Researeh Center for Advanced Materials and Devices, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083

出　　处：《Chinese Physics Letters》2009年第4期229-232,共4页中国物理快报（英文版）

基　　金：Supported by the National Basic Research Program of China under Grant 2007CB924901, Shanghai Leading Academic Dis- cipline Project （B411）, the National Natural Science Foundation of China under Grant No 60677022, and Shanghai Municipal Commission of Science and Technology Project under Grant Nos 07DZ22943 and 08JC1409000.

摘　　要：Modulated photoluminescence spectra have been performed to investigate the impurity activation in MBE-grown As-doped Hg1-xCdxTe （x ≈ 0.3）. The results show that the doped As mainly acting as donors in the as-grown samples can be fully activated as AsTe by two-stage anneals of 285℃/16 h ＋ 240℃/48h, of which the ionization energy has been determined to be about lO.5 meV, slightly smaller than that of intrinsic VHg （about 14.5 meV）. However, the higher activation temperature （e.g. 400℃） at the first-stage can produce large numbers of excessive VHg and seriously deteriorate the quality of epilayers. This couM give a brief guideline for preparing extrinsic p-type HgCdTe materials or devices.Modulated photoluminescence spectra have been performed to investigate the impurity activation in MBE-grown As-doped Hg1-xCdxTe （x ≈ 0.3）. The results show that the doped As mainly acting as donors in the as-grown samples can be fully activated as AsTe by two-stage anneals of 285℃/16 h ＋ 240℃/48h, of which the ionization energy has been determined to be about lO.5 meV, slightly smaller than that of intrinsic VHg （about 14.5 meV）. However, the higher activation temperature （e.g. 400℃） at the first-stage can produce large numbers of excessive VHg and seriously deteriorate the quality of epilayers. This couM give a brief guideline for preparing extrinsic p-type HgCdTe materials or devices.

关 键 词：gamma-ray bursts GAMMA-RAYS RELATIVITY 

分 类 号：O614.33[理学—无机化学] TN304.26[理学—化学]